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AFT09MS007N Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części AFT09MS007N
Szczegółowy opis  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  28 Pages
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MS007N Arkusz danych(HTML) 2 Page - NXP Semiconductors

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2
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +30
Vdc
Gate--Source Voltage
VGS
–6.0, +12
Vdc
Operating Voltage
VDD
12.5, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature (1,2)
TJ
–40 to +150
C
Total Device Dissipation @ TC =25C
Derate above 25C
PD
114
0.91
W
W/C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74C, 7 W CW, 7.5 Vdc, IDQ = 100 mA, 870 MHz
RJC
1.1
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
B, passes 200 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =30 Vdc, VGS =0 Vdc)
IDSS
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS =7.5 Vdc, VGS =0 Vdc)
IDSS
2
Adc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
1
nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID =110 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =1.1 Adc)
VDS(on)
0.12
Vdc
Forward Transconductance
(VDS =7.5 Vdc, ID =3 Adc)
gfs
9.8
S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
2.7
pF
Output Capacitance
(VDS =7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
56
pF
Input Capacitance
(VDS =7.5 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
107
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)



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