AFT09MS007N datasheet(1/28 Pages) NXP

Numer części	AFT09MS007N

Szczegółowy opis	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

PDF	28 Pages

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Producent	NXP [NXP Semiconductors]

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AFT09MS007NT1

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

Designed for handheld two--way radio applications with frequencies from

136 to 941 MHz. The high gain, ruggedness and wideband performance of this

device makes it ideal for large--signal, common--source amplifier applications

in handheld radio equipment.

Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA =25C, CW)

Frequency

(MHz)

Gps

(dB)

D

(%)

Pout

(W)

870 (1)

15.2

71.0

7.3

Wideband Performance (7.5 Vdc, TA =25C, CW)

Frequency

(MHz)

(W)

Gps

(dB)

D

(%)

Pout

(W)

136–174

0.25

14.6

69.0

7.2

350–470 (2,5)

0.20

15.6

60.9

7.3

450–520 (3,5)

0.22

15.4

56.0

7.5

760–860 (4,5)

0.23

15.1

48.1

7.5

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test

Voltage

Result

870 (1)

CW

> 65:1 at all

Phase Angles

0.4

(3 dB Overdrive)

10.8

No Device

Degradation

1. Measured in 870 MHz narrowband test circuit.

2. Measured in 350–470 MHz UHF broadband reference circuit.

3. Measured in 450–520 MHz UHF broadband reference circuit.

4. Measured in 760–860 MHz UHF broadband reference circuit.

5. The values shown are the minimum measured performance numbers across the

indicated frequency range.

Features

 Characterized for Operation from 136 to 941 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band

 Exceptional Thermal Performance

 Extreme Ruggedness

 High Linearity for: TETRA, SSB

 In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.

Typical Applications

 Output Stage VHF Band Handheld Radio

 Output Stage UHF Band Handheld Radio

 Output Stage for 700–800 MHz Handheld Radio

Document Number: AFT09MS007N

Rev. 1, 4/2014

Freescale Semiconductor

Technical Data

136–941 MHz, 7 W, 7.5 V

WIDEBAND

RF POWER LDMOS TRANSISTOR

AFT09MS007NT1

PLD--1.5W

Note: The center pad on the backside of

the package is the source terminal

for the transistor.

Figure 1. Pin Connections

Drain

Gate

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