AFT09MS007N datasheet(7/28 Pages) NXP

Numer części	AFT09MS007N

Szczegółowy opis	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

PDF	28 Pages

Scroll/Zoom	100%

Producent	NXP [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

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7 / 28 page

AFT09MS007NT1

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 870 MHz

0.5

1.5

2.5

3.5

4.5

VDD =7.5 Vdc,f=870 MHz

Pin =0.11 W

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 7. Output Power versus Gate--Source Voltage

at a Constant Input Power

Figure 8. Power Gain, Output Power and Drain

Efficiency versus Input Power

Pin, INPUT POWER (WATTS)

0.01

0.7

0.1

D

Gps

Pout

VDD =7.5 Vdc, IDQ = 100 mA

f = 870 MHz

Pin =0.22 W

VDD =7.5 Vdc, IDQ = 100 mA, Pout =7 W

MHz

Zsource



Zload



870

0.54 + j1.35

1.31 + j1.93

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Zsource

Zload

50 

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