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AFT09MS007N Arkusz danych(PDF) 4 Page - NXP Semiconductors

Numer części AFT09MS007N
Szczegółowy opis  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  28 Pages
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MS007N Arkusz danych(HTML) 4 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
TYPICAL CHARACTERISTICS
160
109
90
108
107
105
100
110
120
130
140
150
106
12
1
200
08
2
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
Ciss
100
10
Figure 3. Drain Current versus Drain--Source Voltage
TJ, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature — CW
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
VDD =7.5 Vdc
0
3
1
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
1.5
VGS =3.75 Vdc
2.5
2
1
23
4
10
3.5 Vdc
TA =25C
0
3.5
4
10
46
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc
0.5
57
68
9
3.25 Vdc
3Vdc
2.5 Vdc
1.59 Amps
ID =1.06 Amps
1.33 Amps



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