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STM32L010RB Arkusz danych(PDF) 75 Page - STMicroelectronics

Numer części STM32L010RB
Szczegółowy opis  Value line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0,128-Kbyte Flash memory, 20-Kbyte SRAM, 512-byte EEPROM, ADC
PDF  89 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L010RB Arkusz danych(HTML) 75 Page - STMicroelectronics

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DS12319 Rev 3
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STM32L010RB
Electrical characteristics
82
Figure 22. ADC accuracy characteristics
Table 54. ADC accuracy(1)(2)(3)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ET
Total unadjusted error
1.8 V < VDDA < 3.6 V,
Range 1, 2 and 3
-2
4
LSB
EO
Offset error
-
1
2.5
EG
Gain error
-
1
2
EL
Integral linearity error
-
1.5
2.5
ED
Differential linearity error
-
1
1.5
ENOB
Effective number of bits
10.2
11
-
bits
Effective number of bits (16-bit mode
oversampling with ratio =256)(4)
11.3
12.1
-
SINAD
Signal-to-noise distortion
62
67.8
-
dB
SNR
Signal-to-noise ratio
63
68
-
Signal-to-noise ratio (16-bit mode
oversampling with ratio =256)(4)
70
76
-
THD
Total harmonic distortion
-
-81
-68.5
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative current injection: Injecting negative current on any of the standard (non-robust) analog input
pins must be avoided as it significantly reduces the accuracy of the conversion being performed on another analog input. It
is recommended to add a Schottky diode (pin to ground) to standard analog pins that may potentially inject negative
current.
Any positive current injection within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.12 does not affect the ADC
accuracy.
3. Better performance may be achieved in restricted VDDA, frequency and temperature ranges.
4. This number is obtained by the test board without additional noise, resulting in non-optimized value for oversampling mode.
ET = total unajusted error: maximum deviation
between the actual and ideal transfer curves.
EO = offset error: maximum deviation
between the first actual transition and
the first ideal one.
EG = gain error: deviation between the last
ideal transition and the last actual one.
ED = differential linearity error: maximum
deviation between actual steps and the ideal ones.
EL = integral linearity error: maximum deviation
between any actual transition and the end point
correlation line.
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
4095
4094
4093
7
6
5
4
3
2
1
0
23
4
5
6
1
7
4093 4094 4095 4096
VDDA
VSSA
EO
ET
EL
EG
ED
1 LSB IDEAL
(1)
(3)
(2)
MS19880V2



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