1997 Aug 14

10

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUW12F; BUW12AF

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

SOT199

97-06-27

D

m

L

L1

b1

0

5

10 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line)

SOT199

α

45

°

A

A1

Q

c

Note

1. Terminals in this zone are not tinned.

e1

e

b

1

23

P

E1

q

E

α

UNIT

D

e

q

Q

P

L

c

e1

A

10.9

mm

5.2

4.8

A1

3.4

3.0

b

1.2

1.0

b1

2.1

1.9

0.6

0.5

21.5

20.5

E1

7.8

6.8

E

15.3

14.7

5.45

16.5

15.7

0.4

L1

(1)

3.7

3.3

2.1

1.9

m

0.8

0.6

6.2

5.8

w

3.3

3.1

DIMENSIONS (mm are the original dimensions)