BUW12F datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Aug 14

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUW12F; BUW12AF

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Measured with a half-sinewave voltage (curve tracer).

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEOsust

collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;

see Figs 8 and 9

BUW12F

400

−−

BUW12AF

450

−−

VCEsat

collector-emitter saturation voltage

BUW12F

IC = 6 A; IB = 1.2 A; see Figs 6 and 10 −−

1.5

BUW12AF

IC = 5 A; IB = 1 A; see Figs 6 and 10

−−

1.5

VBEsat

base-emitter saturation voltage

BUW12F

IC = 6 A; IB = 1.2 A; see Fig.6

−−

1.5

BUW12AF

IC = 5 A; IB = 1 A; see Fig.6

−−

1.5

ICES

collector-emitter cut-off current

VCE =VCESMmax; VBE = 0; note 1

−−

1mA

VCE =VCESMmax; VBE =0;

Tj = 125 °C; note 1

−−

3mA

IEBO

emitter-base cut-off current

VEB =9V; IC =0

−−

hFE

DC current gain

VCE =5V; IC = 10 mA; see Fig.11

VCE =5V; IC = 1 A; see Fig.11

Switching times resistive load (see Figs 12 and 13)

ton

turn-on time

BUW12F

ICon = 6 A; IBon =IBoff = 1.2 A

−−

µs

BUW12AF

ICon = 5 A; IBon =IBoff =1A

−−

µs

storage time

BUW12F

ICon = 6 A; IBon =IBoff = 1.2 A

−−

µs

BUW12AF

ICon = 5 A; IBon =IBoff =1A

−−

µs

fall time

BUW12F

ICon = 6 A; IBon =IBoff = 1.2 A

−−

0.8

µs

BUW12AF

ICon = 5 A; IBon =IBoff =1A

−−

0.8

µs

Switching times inductive load (see Figs 14 and 15)

storage time

BUW12F

ICon = 6 A; IB = 1.2 A; VCL = 250 V;

Tc = 100 °C

−

1.9

2.5

µs

BUW12AF

ICon = 5 A; IB = 1 A; VCL = 300 V;

Tc = 100 °C

−

1.9

2.5

µs

fall time

BUW12F

ICon = 6 A; IB = 1.2 A; VCL = 250 V;

Tc = 100 °C

−

200

300

BUW12AF

ICon = 5 A; IB = 1 A; VCL = 300 V;

Tc = 100 °C

−

200

300

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