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AM29PDL128G Arkusz danych(PDF) 65 Page - Advanced Micro Devices

Numer części AM29PDL128G
Szczegółowy opis  128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
PDF  71 Pages
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Producent  AMD [Advanced Micro Devices]
Strona internetowa  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29PDL128G Arkusz danych(HTML) 65 Page - Advanced Micro Devices

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Am29PDL128G
October 28, 2004
P R E L IM IN A R Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Program Operations” on page 57 for more information.
Parameter
Speed Options
JEDEC
Std.
Description
70R, 70
80
90
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
80
90
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
45
45
ns
t
DVEH
t
DS
Data Setup Time
Min
35
35
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation
(Note 2)
Word
Typ
12.6
µs
Double Word
Typ
16.6
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Double Word or Word (Note 2)
Typ
10.5
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.2
sec



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