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IS25LE512M-RMLA3:P-TY Arkusz danych(PDF) 109 Page - Integrated Silicon Solution, Inc

Numer części IS25LE512M-RMLA3:P-TY
Szczegółowy opis  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Producent  ISSI [Integrated Silicon Solution, Inc]
Strona internetowa  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RMLA3:P-TY Arkusz danych(HTML) 109 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
109
Rev. A6
06/16/2025
8.27 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h)
Set Read Operational Driver Strength
This device supports configurable Operational Driver Strength in both SPI and QPI modes by setting three bits
(ODS0, ODS1, ODS2) within the Extended Read Register. To set the ODS bits the SERPNV and SERPV operation
instructions are require
d. The device’s driver strength can be reduced as low as 12.50% of full drive strength.
Details regarding the driver strength can be found in Table 6.14.
SERPNV is used to set the non-volatile Extended Read register, while SERPV is used to set the volatile Extended
Read register.
Notes:
1. The default driver strength is set to 50%.
2. When SERPNV is executed, the volatile Read Extended Register is set as well as the non-volatile Read Extended
Register.
Figure 8.61 Set Extended Read Parameters Sequence In SPI Mode
Instruction = 85h/83h
CE #
SCK
SI
SO
Data In
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
7
3
2
1
0
6
5
4
High Impedence
Figure 8.62 Set Extended Read Parameters Sequence In QPI Mode
85h/83h
0
1
Mode 3
Mode 0
2
3
7:4
3:0
CE#
SCK
IO[3:0]
Data In



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