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ST7SCR1R4 Arkusz danych(PDF) 82 Page - STMicroelectronics |
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ST7SCR1R4 Arkusz danych(HTML) 82 Page - STMicroelectronics |
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82 / 102 page ![]() ST7SCR 82/102 14.5 MEMORY CHARACTERISTICS Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. 14.5.1 RAM and Hardware Registers 14.5.2 FLASH Memory Operating Conditions: fCPU = 8 MHz. Warning: Do not connect 12V to VPP before VDD is powered on, as this may damage the device. 14.6 SMARTCARD SUPPLY SUPERVISOR ELECTRICAL CHARACTERISTICS (TA = 0... +70 oC, 4.0 < V DD - VSS < 5.5V unless otherwise specified) Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 2 V DUAL VOLTAGE FLASH MEMORY Symbol Parameter Conditions Min Typ Max Unit fCPU Operating Frequency Read mode 8 MHz Write / Erase mode, TA=25°C 8 VPP Programming Voltage 4.0V <= VDD <= 5.5V 11.4 12.6 V IPP VPP Current Write / Erase 30 mA tPROG Byte Programming Time TA=25°C 100 500 µs tERASE Sector Erasing Time 2 10 sec Device Erasing Time 5 10 tVPP Internal VPP Stabilization Time 10 µs tRET Data Retention TA ≤ 55°C 20 years NRW Write Erase Cycles TA=25°C 100 cycles SMARTCARD SUPPLY SUPERVISOR Symbol Parameter Conditions Min Typ Max Unit 5V regulator output (for IEC7816-3 Class A Cards) VCARD SmartCard Power Supply Voltage 4.6 5.00 5.4 V ISC SmartCard Supply Current 55 mA IOVDET Current Overload Detection 120 1) mA tIDET Detection time on Current Overload 170 1) 1400 1) µs tOFF VCARD Turn off Time (see Figure 35 on page 61) CLOADmax ≤ 4.7uF 750 µs tON VCARD Turn on Time (see Figure 35 on page 61) CLOADmax ≤ 4.7uF 150 500 µs IVDD VDD supply current See note 100 mA 3V regulator output (for IEC7816-3 Class B Cards) VCARD SmartCard Power Supply Voltage 2.7 3.3 V ISC SmartCard Supply Current 50 mA IOVDET Current Overload Detection 100 1) mA tIDET Detection time on Current Overload 170 1) 1400 1) us tOFF VCARD Turn off Time (see Figure 35 on page 61) CLOADmax≤4.7uF 750 us |
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