S3C7335 datasheet(21/41 Pages) SAMSUNG

Numer części	S3C7335

Szczegółowy opis	The S3C7335 single-chip CMOS microcontroller has been designed for high performance using Samsungs newest 4-bit CPU core, SAM47

PDF	41 Pages

Scroll/Zoom	100%

Producent	SAMSUNG [Samsung semiconductor]

Strona internetowa	http://www.samsung.com/Products/Semiconductor

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ELECTRICAL DATA

S3C7335/P7335

17-10

Table 17-6. A.C. Electrical Characteristics (Concluded)

A = – 40

°C to + 85 °C, V

DD = 1.8 V to 5.5 V)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Instruction cycle

time (1)

DD = 2.7 V to 5.5 V

0.67

–

µs

DD = 1.8 V to 5.5 V

1.3

–

With subsystem clock (fxt)

114

122

125

TCL0 input

frequency

DD = 2.7 V to 5.5 V

–

1.5

MHz

DD = 1.8 V to 5.5 V

TCL0 input high,

low width

TIH, tTIL

DD = 2.7. V to 5.5 V

0.48

–

µs

DD = 1.8. V to 5.5 V

1.8

SCK cycle time

KCY

DD = 2.7 V to 5.5 V

External

SCK source

800

–

Internal SCK source

650

DD = 1.8 V to 5.5 V

External

SCK source

3200

Internal SCK source

3800

SCK high, low

width

KH, tKL

DD = 2.7 V to 5.5 V

External

SCK source

400

–

Internal SCK source

KCY/2- 50

DD = 1.8 V to 5.5 V

External

SCK source

1600

Internal

SCK source

KCY/2-150

SI setup time to

SIK

External

SCK source

100

–

SCK high

Internal

SCK source

150

SI hold time to

KSI

External

SCK source

400

–

SCK high

Internal SCK source

400

Output delay for

SCK to SO

KSO

DD = 2.7 V to 5.5 V

External

SCK source

–

300

Internal SCK source

250

DD = 1.8 V to 5.5 V

External

SCK source

1000

Internal

SCK source

1000

NOTE: Unless otherwise specified, Instruction Cycle Time condition values assume a main system clock/4 (fx/4) source.

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