Networking Silicon — 82541(PI/GI/EI)

19

4.0

Voltage, Temperature, and Timing Specifications

4.1

Absolute Maximum Ratings

4.2

Targeted Recommended Operating Conditions

4.2.1

General Operating Conditions

Table 1.

a. Maximum ratings are referenced to ground (VSS). Permanent device damage is likely to occur if the ratings in this table are

exceeded. These values should not be used as the limits for normal device operations.

Symbol

Parameter

Min

Max

Unit

VDD (3.3)

DC supply voltage on 3.3 V pins

with respect to VSS

VSS - 0.5

4.6

V

VDD (1.8)

DC supply voltage on 1.8 V pins

with respect to VSS

VSS - 0.5

2.5 or

b. The maximum value is the lesser value of 2.5 V or VDD (2.5) + 0.5 V. This specification applies to biasing the device to a

steady state for an indefinite duration.

V

VDD (1.2)

DC supply voltage on 1.2 V pins

with respect to VSS

VSS - 0.5

1.7 or

c.

The maximum value is the lesser value of 1.7 V or VDD (2.5) + 0.5 V.

V

VDD

DC supply voltage

VSS - 0.5

4.6

V

VI / VO

Input voltage

VSS - 0.5

d. The maximum value must also be less than VIO.

V

IO

Output current

40

mA

TSTG

Storage temperature range

-40

125

°C

ESD per MIL_STD-883 Test

Method 3015, Specification 2001V

Latchup Over/Undershoot: 150

mA, 125 C

VDD overstress:

VDD (3.3) * (7.2 V)

V

Table 2.

Symbol

Parameter

Min

Max

Unit

VDD (3.3)

DC supply voltage on 3.3 V pins

3.0

3.6

V

VDD (1.8)

DC supply voltage on 1.8 V pins

V

VDD (1.2)

DC supply voltage on 1.2 V pins

V

VIO

PCI bus reference voltage

3.0

5.25

V

tR / tF

Input rise/fall time (normal input)

0

200

ns