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MCP4441 Arkusz danych(PDF) 43 Page - Microchip Technology |
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MCP4441 Arkusz danych(HTML) 43 Page - Microchip Technology |
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43 / 100 page ![]() © 2010 Microchip Technology Inc. DS22265A-page 43 MCP444X/446X 4.2.1 NONVOLATILE MEMORY (EEPROM) This memory can be grouped into two uses of nonvolatile memory. These are: • General Purpose Registers • Nonvolatile Wiper Registers The nonvolatile wipers start functioning below the devices VPOR/VBOR trip point. 4.2.1.1 General Purpose Registers These locations allow the user to store up to 5 (9-bit) locations worth of information. 4.2.1.2 Nonvolatile Wiper Registers These locations contain the wiper values that are loaded into the corresponding volatile wiper register whenever the device has a POR/BOR event. There are four registers, one for each resistor network. The nonvolatile wiper register enables stand-alone operation of the device (without Microcontroller control) after being programmed to the desired value. 4.2.1.3 Factory Initialization of Nonvolatile Memory (EEPROM) The Nonvolatile Wiper values will be initialized to mid-scale value. This is shown in Table 4-2. The General purpose EEPROM memory will be programmed to a default value of 0x000. It is good practice in the manufacturing flow to configure the device to your desired settings. TABLE 4-2: DEFAULT FACTORY SETTINGS SELECTION 4.2.1.4 Special Features There are 5 nonvolatile bits that are not directly mapped into the address space. These bits control the following functions: • EEPROM Write Protect • WiperLock Technology for Nonvolatile Wiper 0 • WiperLock Technology for Nonvolatile Wiper 1 • WiperLock Technology for Nonvolatile Wiper 2 • WiperLock Technology for Nonvolatile Wiper 3 The operation of WiperLock Technology is discussed in Section 5.3 . The state of the WL0, WL1, WL2, WL3, and WP bits is reflected in the STATUS register (see Register 4-1). EEPROM Write Protect All internal EEPROM memory can be Write Protected. When EEPROM memory is Write Protected, Write commands to the internal EEPROM are prevented. Write Protect (WP) can be enabled/disabled by two methods. These are: •External WP Hardware pin (MCP44X1 devices only) • Nonvolatile configuration bit (WP) High Voltage commands are required to enable and disable the nonvolatile WP bit. These commands are shown in Section 7.8 “Modify Write Protect or WiperLock Technology (High Voltage)” . To write to EEPROM, both the external WP pin and the internal WP EEPROM bit must be disabled. Write Protect does not block commands to the volatile registers. 4.2.2 VOLATILE MEMORY (RAM) There are seven Volatile Memory locations. These are: • Volatile Wiper 0 • Volatile Wiper 1 • Volatile Wiper 2 • Volatile Wiper 3 • Status Register • Terminal Control (TCON0) Register 0 • Terminal Control (TCON)1 Register 1 The volatile memory starts functioning at the RAM retention voltage (VRAM). Wiper Code 8-bit 7-bit -502 5.0 k Ω Mid scale 80h 40h Disabled -103 10.0 k Ω Mid scale 80h 40h Disabled -503 50.0 k Ω Mid scale 80h 40h Disabled -104 100.0 k Ω Mid scale 80h 40h Disabled |
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