TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

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RF Characterization – Measured Optimum Power Tune

Measured conditions unless otherwise noted: T = 25°C, Bond wires included, Pulse: 100uS PW, 10%.

Parameter

Typical Value

Units

Frequency (F)

1

3.5

GHz

32

32

V

50

50

mA

Input Power

16

23

dBm

Output Power

41.6

41.2

dBm

PAE

70.7

63.3

%

Gain

25.6

18.2

dB

Load Impedance (ZL)

33.4+j11.0

21.9+j12.1

Ω

Source Impedance (ZS)

12.0+j26.5

4.85+j3.46

Ω

Notes:

2. Large signal equivalent output network (normalized).

RF Characterization – Measured Optimum Efficiency Tune

Measured conditions unless otherwise noted: T = 25°C, Bond wires included, Pulse: 100uS PW, 10%.

Parameter

Typical Value

Units

Frequency (F)

1

3.5

GHz

32

32

V

50

50

mA

Input Power

16

23

dBm

Output Power

40.6

40.1

dBm

PAE

80.7

73.7

%

Gain

24.6

17.1

dB

Load Impedance (ZL)

44.0+j26.6

26.2+j29.3

Ω

Source Impedance (ZS)

12.0+j26.5

4.85+j3.46

Ω

Notes:

2. Large signal equivalent output network (normalized).