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TGF2953 Arkusz danych(PDF) 14 Page - TriQuint Semiconductor

Numer części TGF2953
Szczegółowy opis  12 Watt Discrete Power GaN on SiC HEMT
PDF  21 Pages
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Producent  TRIQUINT [TriQuint Semiconductor]
Strona internetowa  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGF2953 Arkusz danych(HTML) 14 Page - TriQuint Semiconductor

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TGF2953
12 Watt Discrete Power GaN on SiC HEMT
Datasheet: Rev A 10-22-14
- 14 of 21 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Model Load Pull Contours
Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.
3dB compression performance referenced to maximum large-signal gain.
10GHz, Load-pull
41.1
40.9
40.7
11
10.5
9.96
9.46
55.8
50.8
45.8
•
•
•
•
Max Power is 41.2dBm
at Z = 8.924+12.857iΩ
Ω
Ω
Ω
Γ
Γ
Γ
Γ
= 0.0708+0.5211i
•
•
•
•
Max Gain is 11.1dB
at Z = 5.448+18.933iΩ
Ω
Ω
Ω
Γ
Γ
Γ
Γ
= 0.2608+0.7196i
•
•
•
•
Max PAE is 56%
at Z = 7.266+13.961iΩ
Ω
Ω
Ω
Γ
Γ
Γ
Γ
= 0.0799+0.604i
Zo = 14Ω
Ω
Ω
Ω
Zs(fo) = 0.9Ω
Ω
Ω
Ω
Zs(2fo) = 6.1Ω
Ω
Ω
Ω
Zs(3fo) = 6.1Ω
Ω
Ω
Ω
Zl(2fo) = 14Ω
Ω
Ω
Ω
Zl(3fo) = 14Ω
Ω
Ω
Ω
Power
Gain
PAE



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