TGF2953_15 datasheet(11/21 Pages) TRIQUINT

Numer części	TGF2953

Szczegółowy opis	12 Watt Discrete Power GaN on SiC HEMT

PDF	21 Pages

Scroll/Zoom	100%

Producent	TRIQUINT [TriQuint Semiconductor]

Strona internetowa	http://www.triquint.com

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11 / 21 page

TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

- 11 of 21 -

Disclaimer: Subject to change without notice

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Model Load Pull Contours

Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.

3dB compression performance referenced to maximum large-signal gain.

1GHz, Load-pull

40.9

40.7

40.5

31.7

31.2

30.7

65.9

60.9

55.9

•

Max Power is 41.1dBm

at Z = 38.094+0.12iΩ

Ω

= 0.2075+0.0015i

•

Max Gain is 32dB

at Z = 22.399+31.115iΩ

Ω

= 0.2628+0.4839i

•

Max PAE is 68.6%

at Z = 56.434+17.655iΩ

Ω

= 0.4136+0.1271i

Zo = 25Ω

Ω

Zs(fo) = 4.02+29.6iΩ

Ω

Zs(2fo) = 28Ω

Ω

Zs(3fo) = 28Ω

Ω

Zl(2fo) = 25Ω

Ω

Zl(3fo) = 25Ω

Ω

Power

Gain

PAE

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