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TGF2953 Arkusz danych(PDF) 12 Page - TriQuint Semiconductor |
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TGF2953 Arkusz danych(HTML) 12 Page - TriQuint Semiconductor |
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12 / 21 page ![]() TGF2953 12 Watt Discrete Power GaN on SiC HEMT Datasheet: Rev A 10-22-14 - 12 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Model Load Pull Contours Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes. 3dB compression performance referenced to maximum large-signal gain. 3GHz, Load-pull 41.1 40.9 40.7 21.1 20.6 20.1 66.7 61.7 56.7 • • • • Max Power is 41.2dBm at Z = 29.1+14.431iΩ Ω Ω Ω Γ Γ Γ Γ = 0.1372+0.2302i • • • • Max Gain is 21.4dB at Z = 10.497+41.418iΩ Ω Ω Ω Γ Γ Γ Γ = 0.4035+0.696i • • • • Max PAE is 67.7% at Z = 29.028+30.028iΩ Ω Ω Ω Γ Γ Γ Γ = 0.293+0.393i Zo = 25Ω Ω Ω Ω Zs(fo) = 1.8+7.03iΩ Ω Ω Ω Zs(2fo) = 6.1Ω Ω Ω Ω Zs(3fo) = 6.1Ω Ω Ω Ω Zl(2fo) = 25Ω Ω Ω Ω Zl(3fo) = 25Ω Ω Ω Ω Power Gain PAE |
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