3

HV311

Notes:

This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.

This voltage depends on the characteristics of the external N-Channel MOSFET. V

IRF530 is a registered trademark of International Rectifier.

1.

2.

3.

Sym

Parameter

Min Typ Max Units Conditions

Gate Drive Output

V

GATE

Maximum GATE drive voltage

8.5

10

12

V

V

I

GATEUP

GATE drive pull-up current

500

-

-

µA

V

I

GATEDOWN

GATE drive pull-down current

40

-

-

mA

V

3

)

I

RAMP

Ramp pin output current

-

10

-

µA

V

t

POR

2.0

-

-

ms

---

t

RISE

Time from GATE turn on to V

400

-

-

µs

---

t

LIMIT

Duration of current limit mode

-

5.0

-

ms

---

t

PWRGD

Time from current limit to PWRGD

-

5.0

-

ms

---

V

RAMP

-

3.6

-

V

---

t

STARTLIMIT

Start up time limit

80

100

120

ms

---

t

CBTRIP

Circuit breaker delay time

2.0

-

5.0

µs

May be extended by external RC

circuit

t

AUTO

Automatic restart delay time

12

-

-

s

---

Power Good Output

V

PWRGD(HI)

Power good pin breakdown voltage

90

-

-

V

PWRGD is high

V

PWRGD(LO)

Power good pin output low voltage

-

0.5

0.8

V

I

Dynamic Characteristics

t

GATEHLOV

OV delay

-

-

500

ns

---

t

GATEHLUV

UV delay

-

-

500

ns

---