STM32F303VC datasheet(81/148 Pages) STMICROELECTRONICS

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STM32F303xB STM32F303xC

Electrical characteristics

124

6.3.9

PLL characteristics

The parameters given in Table 46 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 24.

6.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 46. PLL characteristics

Symbol

Parameter

Value

Unit

Min

Typ

Max

fPLL_IN

PLL input clock(1)

1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

1(2)

-24(2)

MHz

PLL input clock duty cycle

40(2)

-60(2)

fPLL_OUT

PLL multiplier output clock

16(2)

-72

MHz

tLOCK

PLL lock time

200(2)

µs

Jitter

Cycle-to-cycle jitter

300(2)

2. Guaranteed by design.

Table 47. Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design.

Unit

tprog

16-bit programming time TA = –40 to +105 °C

53.5

µs

tERASE Page (2 KB) erase time

TA = –40 to +105 °C

tME

Mass erase time

TA = –40 to +105 °C

IDD

Supply current

Write mode

Erase mode

Table 48. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

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