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LTC4221IGN Arkusz danych(PDF) 15 Page - Linear Technology |
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LTC4221IGN Arkusz danych(HTML) 15 Page - Linear Technology |
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15 / 28 page ![]() 15 LTC4221 4221f generate a logic high output to indicate that VOUT is valid. An internal high-to-low glitch filter helps to prevent nega- tive voltage transients on each FB pin from deasserting its PWRGD. The relationship between glitch filter time and an FB pin transient voltage is shown in Figure 4. Using the functionality of the PWRGD1 pin, the LTC4221 can be configured to do sequential power-up and power-down as shown by the circuit in Figure 5. Referring back to Figure 3, ON2 is held low until VOUT1 ramps high enough for FB1 to exceed its undervoltage threshold at time point 5 when PWRGD1 ramps up, pulling ON2 high. At time point 7, the control logic sees ON2 exceeding its off threshold and so commences a start-up cycle for channel 2. Similarly, when ON1 is forced low by Q2 at time point 9, GATE1 is pulled low by its 100µA pull-down while ON2 is held high by the R4 pull-up on PWRGD1. Its is only when channel 1 is powered off and VOUT1 discharges below its undervoltage threshold at time point 10 that PWRGD1’s internal N-channel MOSFET pull-down is triggered and ON2 goes low. At time point 11, ON2 trips its off threshold and GATE2 pulls low with a 100µA pull-down, powering off channel 2. For VOUT overvoltage detection, each FB pin has an over- voltage comparator with a low-to-high threshold of 0.822V and a low-to-high glitch filter of 18µs. This threshold is designed to be 33% higher than the undervoltage thresh- old. If either FB pin trips this threshold, the fault latch is set, all GATE pins are pulled low with internal NFET pull-downs and the LTC4221 goes into a fault state. In the third function, each FB pin is used to control its channel’s current limit during its start-up cycle. This will be featured in the Start-Up Cycle with Current Limit section. GATE Pin Functions Each GATE pin controls the gate of its channel’s external N-channel MOSFET. Individual internal charge pumps powered by VCC1 guarantee a gate drive of minimum 4.5V and maximum 18V (internally clamped) for GATE1 and GATE2. During UVLO, the internal charge pumps are off and both GATE pins are pulled low by internal N-channel MOSFET pull-downs. Outside UVLO, when ON1 is below its off threshold, the charge pumps are on and GATE1 is held low by an internal 100µA current pull-down. Once APPLICATIO S I FOR ATIO + VCC1 ON1 SENSE1 ON2 PWRGD1 RF2 15k LTC4221* GATE1 FB1 4221 F05 1 16 6 10 9 CTIMER 1µF GND TIMER RF1 56k VOUT1 3.3V 5A VOUT2 2.5V 5A Q1 IRF7413 RSENSE1 0.004Ω CLOAD1 Z1 Q2: 2N7002LT1 Z1: SMAJ10 * ADDITIONAL DETAILS OMITTED FOR CLARITY RX1 10Ω CX1 100nF R4 10k R2 2k Q2 R1 10k R6 10k R5 10Ω R3 10k LONG VCC1 LONG PCB EDGE CONNECTOR (MALE) SHORT SHORT BACKPLANE CONNECTOR (FEMALE) LONG VCC2 ON/OFF Figure 5. Using PWRGD1 to Configure Sequential Power-Up/Power-Down FEEDBACK TRANSIENT (mV) 40 60 80 20 50 70 30 10 0 0 20 40 60 80 100 120 140 160 180 200 4221 F04 TA = 25°C Figure 4. FB Comparator Glitch Filter Time vs Feedback Transient Voltage |
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