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LTC4221IGN Arkusz danych(PDF) 21 Page - Linear Technology

Numer części LTC4221IGN
Szczegółowy opis  Dual Hot Swap Controller/ Power Sequencer with Dual Speed, Dual Level Fault Protection
PDF  28 Pages
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Producent  LINER [Linear Technology]
Strona internetowa  http://www.linear.com
Logo LINER - Linear Technology

LTC4221IGN Arkusz danych(HTML) 21 Page - Linear Technology

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21
LTC4221
4221f
0.4V
VTH
1.234V
1.9µA
20µA
<9.5µA
9.5µA
9.5µA
DISCHARGE
BY LOAD
4221 F14
0.851V
0.4V
1.234V
12
VCCn
VONn
VTIMER
VGATE2
VOUT2
IRSENSE2
34 5 6
7 8
9
A
REGULATED AT 25mV/RSENSE
REGULATED AT
VSENSE(ACL)(t)/RSENSE
RESET
STATE
INITIAL
TIMING
CHANNEL 2
START-UP
NORMAL
CYCLE
Start-Up Cycle With Current Limit
During a channel start-up cycle, if the inrush current as
according to Equation (12) is large enough to cause a
voltage drop greater than the active current limit threshold
(VSENSE(ACL)) across the sense resistor, an internal servo
loop controls the operation of the 9.5µA current source at
the GATE pin to regulate the load current to:
I
V
R
INRUSH
SENSE ACL
SENSE
=
()
(13)
The active current limit threshold for channel
n has a
component controlled by the voltage at the FB
n pin. When
FB
n = 0V, VSENSE(ACL) = 9mV. As VOUTn and FBn ramp up,
VSENSE(ACL) increases linearly until FBn reaches 0.5V,
where VSENSE(ACL) saturates at 25mV. In this fashion, the
inrush current is controlled by this “foldback” limiting that
tends to keep the power dissipation in the external MOSFET
constant during the start-up cycle.
The timing diagram in Figure 14 illustrates the operation of
the LTC4221 in a channel start-up cycle with limited inrush
current as described by Equation 13. Between time points
5 and 6, the GATE2 pin ramps up with IGATE = 9.5µA. At
time point 6, the inrush current increases enough to trip
VSENSE(ACL)(t) and an internal servo loop engages, limiting
the inrush current to the level as in Equation 13 by
decreasing IGATE (<9.5µA). As a result, the ramp rate of
both VGATE2 and VOUT2 decreases and VSENSE2 increases
linearly until it saturates at 25mV at time point 7. At time
point 8, the external MOSFET enters triode operation.
IINRUSH drops as the ramp rate of VOUT2 falls below that of
VGATE2 so IGATE reverts back to 9.5µA. At time point 9, the
internal servo loop to control IINRUSH is disengaged and
channel 2 slow comparator is armed, ending the channel 2
start-up cycle. So if CLOAD2 is not fully charged up at this
point, IINRUSH will be subject to the slow comparator
threshold and actions as outlined in the Electronic Circuit
Breaker section. For a successful channel start-up, the
current limited part of the VOUT ramp-up (time points 6 and
8 of Figure 14) must not exceed the sum of start-up cycle
delay as given by Equation 10 and the slow comparator
response time as given by Equation 1. An example of an
unsuccessful start-up is Figure 11 which shows a channel
powering up into an overcurrrent at the load.
The fast comparators of both channels are armed at the
end of the initial timing cycle at time point 4 of Figure 14.
If a short circuit during the start-up cycle overrides the
servo loop and causes VRSENSE of either channel to exceed
100mV for more than 1µs, the electronic circuit breaker
trips and the LTC4221 enters the fault state.
Frequency Compensation at Start-Up Cycle
If a channel’s external gate input capacitance (CISS) is
greater than 600pF, no external gate capacitor is required
at GATE to stabilize the internal current-limiting loop dur-
ing start-up with current limit. The servo loop that controls
the external MOSFET during current limiting has a unity-
gain frequency of about 105kHz and phase margin of 80°
for external MOSFET gate input capacitances to 2.5nF.
Power MOSFET
Power MOSFETs can be classified by RDS(ON) at VGS gate
drive ratings of 10V, 4.5V, 2.5V and 1.8V. Those rated for
RDS(ON) at 10V VGS usually have a higher VGS absolute
maximum rating than those at 4.5V and 2.5V. At low
APPLICATIO S I FOR ATIO
Figure 14. Channel 2 Start-Up with Current Limit



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