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STM32L010F4 Arkusz danych(PDF) 45 Page - STMicroelectronics |
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STM32L010F4 Arkusz danych(HTML) 45 Page - STMicroelectronics |
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45 / 91 page ![]() DS12323 Rev 3 45/91 STM32L010F4/K4 Electrical characteristics 81 Figure 10. IDD vs VDD, Run mode, code running from Flash memory, Range 2, HSE bypass, 1 ws MSv48133V1 Table 21. Current consumption in Run mode, code with data processing running from RAM Symbol Parameter Conditions fHCLK (MHz) Typ Max(1) Unit IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash memory switched OFF fHSE = fHCLK up to 16 MHz, included fHSE = fHCLK/2 above 16 MHz (PLL ON)(2) Range 3, VCORE =1.2 V, VOS[1:0] = 11 1 115 140 µA 2 205 240 4 385 420 Range 2, VCORE = 1.5 ,V, VOS[1:0] = 10 4 0.48 0.55 mA 8 0.935 1.1 16 1.8 2 Range 1, VCORE =1.8 V, VOS[1:0] = 01 81.1 1.4 16 2.1 2.5 32 4.5 4.9 MSI clock Range 3, VCORE =1.2 V, VOS[1:0] = 11 0.065 22 38 µA 0.524 67 91 4.2 415 450 IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash memory switched OFF HSI16 clock source (16 MHz) Range 2, VCORE =1.5 V, VOS[1:0] = 10 16 1.95 2.2 mA Range 1, VCORE =1.8 V, VOS[1:0] = 01 32 4.7 5.2 1. Guaranteed by characterization results at 85 °C, not tested in production, unless otherwise specified. |
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