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STM32L010F4 Arkusz danych(PDF) 62 Page - STMicroelectronics |
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STM32L010F4 Arkusz danych(HTML) 62 Page - STMicroelectronics |
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62 / 91 page ![]() Electrical characteristics STM32L010F4/K4 62/91 DS12323 Rev 3 6.3.9 Memory characteristics RAM memory Flash memory and data EEPROM fPLL_OUT PLL output clock 2 - 32 MHz tLOCK PLL input = 16 MHz PLL VCO = 96 MHz -115 160 µs Jitter Cycle-to-cycle jitter - - ± 600 ps IDDA(PLL) Current consumption on VDDA -220 450 µA IDD(PLL) Current consumption on VDD -120 150 1. Guaranteed by characterization results, not tested in production. 2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT. Table 39. PLL characteristics (continued) Symbol Parameter Value Unit Min Typ Max(1) Table 40. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode). Stop mode (or reset) 1.8 - - V Table 41. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit VDD Operating voltage Read / Write / Erase - 1.8 - 3.6 V tprog Programming time for word or half-page Erasing - 3.28 3.94 ms Programming - 3.28 3.94 IDD Average current during the whole programming / erase operation TA = 25 °C, VDD = 3.6 V - 500 700 µA Maximum current (peak) during the whole programming / erase operation -1.5 2.5 mA |
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