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STM32L010R8 Arkusz danych(PDF) 74 Page - STMicroelectronics

Numer części STM32L010R8
Szczegółowy opis  Value line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0,64-Kbyte Flash memory, 8-Kbyte SRAM, 256-byte EEPROM, ADC
PDF  92 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L010R8 Arkusz danych(HTML) 74 Page - STMicroelectronics

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Electrical characteristics
STM32L010K8 STM32L010R8
74/92
DS12325 Rev 3
Equation 1: RAIN max formula
The presented formula above (Equation 1) is a representation of an hypothetical ideal ADC
and illustrates how the parameters influence each other. It is not to be used for computation
of actual values.
tSTAB(3)
Power-up time
-
0
0
1
µs
tConV(3)
Total conversion time
(including sampling time)
fADC = 16 MHz
0.875
-
10.81
µs
-
14 to 173 (tS for sampling +12.5 for
successive approximation)
1/fADC
1. VDDA minimum value can be decreased in specific temperature conditions.
Refer to Table 53: RAIN max for fADC = 16 MHz.
2. A current consumption proportional to the APB clock frequency has to be added
Refer to Table 29: Peripheral current consumption in run or Sleep mode.
3. Guaranteed by design, not tested in production.
4. Standard channels have an extra protection resistance which depends on supply voltage.
Refer to Table 53: RAIN max for fADC = 16 MHz.
Table 52. ADC characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RAIN
TS
fADC CADC
2
N2
+
()
ln
×
×
---------------------------------------------------------------- R
ADC
<
Table 53. RAIN max for fADC = 16 MHz(1)
Ts (cycles)
tS (µs)
RAIN max for fast
channels (kΩ)
RAIN max for standard channels (kΩ)
VDD > 2.7 V
VDD > 2.4 V
VDD > 2.0 V
VDD > 1.8 V
1.5
0.09
0.5
< 0.1
NA
NA
NA
3.5
0.22
1
0.2
< 0.1
NA
NA
7.5
0.47
2.5
1.7
1.5
< 0.1
NA
12.5
0.78
4
3.2
3
1
NA
19.5
1.22
6.5
5.7
5.5
3.5
NA
39.5
2.47
13
12.2
12
10
NA
79.5
4.97
27
26.2
26
24
< 0.1
160.5
10.03
50
49.2
49
47
32
1. Guaranteed by design.



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