STM32L010R8 datasheet(42/92 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L010K8 STM32L010R8

42/92

DS12325 Rev 3

6.3.3

Embedded internal reference voltage

The parameters given in Table 18 are based on characterization results, unless otherwise

specified.

VPOR/PDR

Power on/power down reset

threshold

Falling edge

1.5

1.8

Rising edge

1.3

1.5

1.8

VBOR0

Brownout reset threshold 0

Falling edge

1.67

1.7

1.74

Rising edge

1.69

1.76

1.8

VBOR1

Brownout reset threshold 1

Falling edge

1.87

1.93

1.97

Rising edge

1.96

2.03

2.07

VBOR2

Brownout reset threshold 2

Falling edge

2.22

2.30

2.35

Rising edge

2.31

2.41

2.44

VBOR3

Brownout reset threshold 3

Falling edge

2.45

2.55

2.6

Rising edge

2.54

2.66

2.7

VBOR4

Brownout reset threshold 4

Falling edge

2.68

2.8

2.85

Rising edge

2.78

2.9

2.95

Vhyst

Hysteresis voltage

BOR0 threshold

All BOR thresholds excepting BOR0

100

1. Guaranteed by characterization results, not tested in production.

Table 16. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 17. Embedded internal reference voltage calibration values

Calibration value name

Description

Memory address

VREFINT_CAL

Raw data acquired at temperature of 25°C, VDDA= 3 V

0x1FF8 0078 - 0x1FF8 0079

Table 18. Embedded internal reference voltage(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT out(2)

Internal reference voltage

–40 °C < TJ < +85 °C

1.202

1.224

1.242

TVREFINT

Internal reference startup time

VVREF_MEAS

VDDA voltage during VREFINT

factory measure

-2.99

3.01

AVREF_MEAS

Accuracy of factory-measured

VREFINT value(3)

Including uncertainties

due to ADC and VDDA

values

±5

TCoeff(4)

Temperature coefficient

–40 °C < TJ < +85 °C

100

ppm/°C

0 °C < TJ < +50 °C

ACoeff(4)

Long-term stability

1000 hours, T= 25 °C

1000

ppm

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