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PWD5T60 Arkusz danych(PDF) 6 Page - STMicroelectronics |
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PWD5T60 Arkusz danych(HTML) 6 Page - STMicroelectronics |
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6 / 27 page ![]() 4 Electrical characteristics 4.1 Driver HIN is referred to channels HIN1, HIN2, HIN3; LIN is referred to channels LIN1, LIN2, LIN3. Table 5. Electrical characteristics VCC = 15 V; TJ = +25 °C, unless otherwise specified Symbol Parameter Test conditions Min Typ Max Unit Low-side section supply VCCthON VCC UVLO turn on threshold 8.7 9.2 9.7 V VCCthOFF VCC UVLO turn off threshold 8.2 8.7 9.2 V VCChys VCC UVLO hysteresis 0.4 0.5 0.6 V IQCCU VCC under-voltage quiescent supply current VCC = 7 V; EN = 5 V; CIN = SGND LVG & HVG: OFF 430 744 µA IQCC VCC quiescent supply current EN = 5 V; CIN = SGND LVG & HVG: OFF 1125 1650 µA High-side floating section supply (1) VBOthON VBO UVLO turn on threshold 8.2 8.7 9.2 V VBOthOFF VBO UVLO turn off threshold 7.7 8.2 8.7 V VBOhys VBO UVLO hysteresis 0.4 0.5 0.6 V IQBOU VBO under-voltage quiescent supply current VCC = VBO = 6.5 V; EN = 5 V; CIN = SGND LVG OFF; HVG = ON 25 62 µA IQBO VBO quiescent supply current VBO = 15 V EN = 5 V; CIN = SGND LVG OFF; HVG = ON 84 150 µA ILK High voltage leakage current BOOT = HVG = OUT = 520 V 15 µA RDboot Bootstrap Diode on resistance 200 Ω Logic Inputs Vil Low level logic threshold voltage 0.8 1.4 V Vih High level logic threshold voltage 1.8 2.3 V Vhyst Logic input threshold hysteresis 0.8 0.9 1.2 V VSSDh SmartSD restart threshold 3.6 4.1 4.4 V VSSDl SmartSD unlatch threshold 0.56 0.75 V ILINh LIN logic “1” input bias current VLINx = 15 V 120 150 200 µA ILINl LIN logic “0” input bias current VLINx = 0 V 1 µA IHINh HIN logic “1” input bias current VHINx = 15 V 120 150 200 µA IHINl HIN logic “0” input bias current+ VHINx = 0 1 µA RPD_IN Logic input pull-down resistor 75 100 125 kΩ IENh EN logic “1” input bias current VEN = 15 V 110 150 200 µA IENl EN logic “0” input bias current VEN = 0 V 1 µA RPD_EN EN pull-down resistor 75 100 125 kΩ PWD5T60 Electrical characteristics DS14558 - Rev 2 page 6/27 |
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