3

Electrical data

3.1

Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 2 may cause permanent damage to the device.

Exposure to maximum rating conditions for extended periods may affect device reliability. All voltages referred to

ground (GND) unless otherwise specified.

Table 2. Absolute maximum ratings

Symbol

Parameter

Test Condition

Min

Max

Unit

VCC

Power supply voltage

-0.3

21

V

VCC-SENSEx

VCC to SENSE pin voltage

-0.3

25

V

VBOx

BOOT to OUT pin

-0.3

21

V

BVDSS

MOSFETs blocking Voltage

TJ = 25°C

500

V

ID

Drain current

(per MOSFET)

DC @TCB = 25 °C (1)

3.5

A

DC @TCB = 100 °C (1) (2)

2

A

Pulse @TCB = 25 °C (1) (2) (3)

14

A

SROUT

Full bridge outputs

slew rate (10% - 90%)

(2)

40

V/ns

VOUTx

Output voltage

VBOOTx - 21

500

V

VBOOTx

Bootstrap voltage

-0.3

520

V

VCIN

Comparator input voltage

-0.3

20

V

Vi

Logic input voltage (4)

- 0.3

15

V

VOD

Open-drain voltage

(OD, FAULT)

-0.3

21

V

VFAULT

FAULT pin voltage

- 0.3

21

V

VISO

Isolation Voltage (1 min) (2)

2500

VRMS

TJ

Junction temperature

-40

125

°C

Tstg

Storage temperature

-50

150

°C

PTOT

Total power dissipation (5)

Tamb = 25°C

JEDEC board (6) (7)

5.2

W

ESD

Human Body Model

2 (8)

kV

1. TCB is the temperature of the case-bottom pad.

2. Not tested in production.

3. The value specified by the pulse duration limited by maximum junction temperature.

4. EN, LINx and HINx pins.

5. Value calculated basing on thermal resistance, power uniformity distributed over the six power MOSFETs, still air.

6. The device mounted on a FR4 2s2p board as JESD51-5/7.

7. Actual applicative board max. dissipation could be higher or lower depending on the layout and cooling techniques.

8. Pins 12, 13, 14, 15, 20 and 21 have HBM ESD value ± 1.75 kV

PWD5T60

Electrical data

DS14558 - Rev 2

page 4/27