PWD5T60 datasheet(7/27 Pages) STMICROELECTRONICS

7 / 27 page

Symbol

Parameter

Test conditions

Min Typ

Max Unit

Sense comparator (2) and FAULT

VREF

Internal voltage reference

430 480

530

CINhyst

Comparator input hysteresis

CIN_PD

Comparator input pull-down current

VCIN = 1 V

µA

IOD

OD internal current source

2.5

7.5

µA

RON_OD

OD On resistance

IOD = 16 mA

IOL_OD

OD low level sink current

VOD = 400 mV

ISAT_OD

OD saturation current

VOD = 5 V

108

VFLOAT_OD OD floating voltage level

OD connected only to an external

capacitance

4.5

4.9

5.4

RON_F

FAULT On resistance

IFAULT = 8 mA

100

IOL_F

FAULT low level sink current

VFAULT = 400 mV

tOD

Comparator propagation delay

Rpu = 100 kΩ to 5 V;

Voltage step on CIN = 0 to 3.3 V;

50% CIN to 90% OD

350 475

590

tCIN-F

Comparator triggering to FAULT

Voltage step on CIN = 0 to 3.3 V;

50% CIN to 90% FAULT

360 475

590

tCINoffMOS

Comparator triggering to low-side

MOSFET turn-off propagation delay

Voltage step on CIN = 0 to 3.3 V; OUT 500

Ω to 5 V, VS = 5 V

50% CIN to 10% OUT

730 840

950

tFCIN

Comparator input filter time

360 475

590

OD Slew rate

CL = 1 nF;

Rpu = 33 kΩ to 5 V;

90% to 10% OD

100 V/µs

Over temperature protection

TTSD

Shut down temperature (3) (4)

120 135

150

°C

THYS

Temperature hysteresis (3) (4)

°C

Dynamic characteristics

tFIN

LIN, HIN input filter time

tFEN

EN input filter time

200 300

400

Deadtime

200 300

400

MDT

Matching deadtime (5)

1. VBO = VBOOT - VOUT

2. Comparator is disabled when VCC is in UVLO condition

3. Characterization data, not tested in production.

4. The temperature sensor is located in the driver.

5. MDT = | DTLH - DTHL |

PWD5T60

Electrical

characteristics

DS14558 - Rev 2

page 7/27

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