5

Device characterization values

The PWD5T60 integrates six 500 V N-channel power MOSFETs in three phase full bridge configuration.

Table 7, Table 8. Inductive load switching characteristics and electrical characteristics curves contained in this

section represent typical values based on characterization and simulation results and are not subject to the

production test.

Table 7. Power MOSFETs

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

MOSFET Dynamic

Qg

Total gate charge

VGS = 10 V, TJ = 25 °C

VDS = 480 V, ID = 3.5 A

-

5.3

-

nC

Source-Drain diode

trr

Diode reverse recovery time

ISD = 3.5 A, TJ = 25 °C

di/dt = 100 A/µs,

VDS = 60 V

-

58

-

ns

Qrr

Diode reverse recovery charge

-

109

-

µC

IRRM

Diode reverse recovery current

-

4

-

A

trr

Diode reverse recovery time

ISD = 3.5 A, TJ = 150 °C

di/dt = 100 A/µs,

VDS = 60 V

-

109

-

ns

Qrr

Diode reverse recovery charge

-

309

-

µC

IRRM

Diode reverse recovery current

-

5

-

A

Table 8. Inductive load switching characteristics

Symbol Parameter

Test condition

Min

Typ

Max

Unit

t(ON) (1) Turn-on time

VS = 300 V,

VCC = VBO = 15 V,

ID = 1.75 A

See Figure 3

-

390

-

ns

tC(ON) (2) Crossover time (on)

-

150

-

ns

t(OFF) (1) Turn-off time

-

165

-

ns

tC(OFF) (2) Crossover time (off)

-

40

-

ns

tSD Shutdown to high/low-side propagation delay

-

HS: 75

LS: 85

-

ns

Eon Turn-on switching losses

-

75

-

µJ

Eoff Turn-off switching losses

-

8

-

µJ

1. t(ON) and t(OFF) include the propagation delay time of the internal driver.

2. tC(ON) and tC(OFF) are the switching times of MOSFET itself under the internally given gate driving conditions.

PWD5T60

Device characterization

values

DS14558 - Rev 2

page 9/27