STM32H533CE datasheet(101/231 Pages) STMICROELECTRONICS

101 / 231 page

DS14539 Rev 1

101/231

STM32H533xx

Electrical characteristics

200

fHCLK

AHB clock frequency

VOS0(5)

250

MHz

VOS1

200

VOS2

150

VOS3

100

fPCLKx

(x=1,2,3)

APB1, APB2, APB3

clock frequency

VOS0(5)

250

MHz

VOS1

200

VOS2

150

VOS3

100

Power dissipation at

TA = 85 °C

for suffix 6(6)

WLCSP39

See Table 137 for

appropriate thermal

resistance and package.

Power dissipation is

calculated according to

ambient temperature

(TA), maximum junction

temperature (TJ), and

selected thermal

resistance.

LQFP48

UFQFPN48

LQFP64

LQFP100

LQFP144

UFBGA100

UFBGA144

Power dissipation at

TA = 105 °C

for suffix 7(6)

WLCSP39

See Table 137 for

appropriate thermal

resistance and package.

Power dissipation is

calculated according to

ambient temperature

(TA), maximum junction

temperature (TJ), and

selected thermal

resistance.

LQFP48

UFQFPN48

LQFP64

LQFP100

LQFP144

UFBGA100

UFBGA144

Ambient temperature

for the suffix 7 version

Maximum power dissipation

-40

105

°C

Low dissipation or LDO bypass mode

-40

125

Ambient temperature

for the suffix 6 version

Maximum power dissipation

-40

Junction temperature

range

VOS0

-40

105

°C

VOS1, VOS2, and VOS3

-40

130

1. HSLV = High-speed low-voltage mode. Refer to General-purpose I/Os (GPIO) section of RM0481.

2. When RESET is released functionality is guaranteed down to BOR level 0 minimum voltage.

3. This formula must be applied on power supplies related to the I/O structure described by the pin definition table. Maximum

I/O input voltage is the smallest value between min (VDD, VDDA, VDDIO2) + 3.6 V and 5.5 V.

For operation with voltages higher than min (VDD, VDDA, VDDIO2) + 0.3V, the internal pull-up and pull-down resistors must

be disabled.

5. In VOS0 mode the max TJ is 105 °C.

Table 20. General operating conditions (continued)

Symbol

Parameter

Operating conditions

Min

Typ

Max

Unit

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