2N7002BKMB

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 2 — 13 June 2012

3 of 15

NXP Semiconductors

2N7002BKMB

60 V, single N-channel Trench MOSFET

5.

Limiting values

[1]

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Measured between all pins.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

60

V

gate-source voltage

-20

20

V

drain current

[1]

-

450

mA

[1]

-

220

mA

peak drain current

-

1.8

A

total power dissipation

[2]

-

360

mW

[1]

-

715

mW

-

2700

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1]

-

450

mA

ESD maximum rating

electrostatic discharge voltage

HBM

[3]

-

2000

V

Fig 2.

Normalized total power dissipation as a

function of junction temperature

Fig 3.

Normalized continuous drain current as a

function of junction temperature

-75

175

125

25

75

-25

001aao121

40

80

120

(%)

0

-75

175

125

25

75

-25

001aao122

40

80

120

(%)

0