2N7002BKMB datasheet(6/15 Pages) NXP

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2N7002BKMB

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Product data sheet

Rev. 2 — 13 June 2012

6 of 15

NXP Semiconductors

2N7002BKMB

60 V, single N-channel Trench MOSFET

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =10µA; VGS =0V; Tj = 25 °C

--V

VGSth

gate-source threshold

voltage

ID =250 µA; VDS =VGS; Tj = 25 °C

1.1

1.6

2.1

IDSS

drain leakage current

VDS =60V; VGS =0V; Tj = 25 °C

--1

µA

VDS =60V; VGS =0V; Tj = 150 °C

--10

µA

IGSS

gate leakage current

VGS =-20 V; VDS =0V; Tj = 25 °C

--10

µA

VGS =20V; VDS =0V; Tj = 25 °C

--10

µA

RDSon

drain-source on-state

resistance

VGS =10V; ID =450 mA; Tj =25°C

1.6

Ω

VGS =10V; ID =450 mA; Tj = 150 °C

2.2

3.5

Ω

VGS =5V; ID =50mA; Tj =25°C

1.3

Ω

gfs

forward

transconductance

VDS =10V; ID = 200 mA; Tj = 25 °C

550

Dynamic characteristics

QG(tot)

total gate charge

VDS =30V; ID = 300 mA; VGS =4.5 V;

Tj =25°C

-0.5

0.6

QGS

gate-source charge

0.2

QGD

gate-drain charge

0.1

Ciss

input capacitance

VDS =10V; f=1MHz; VGS =0V;

Tj =25°C

3350pF

Coss

output capacitance

Crss

reverse transfer

capacitance

-4

-pF

td(on)

turn-on delay time

VDS =50V; RL = 250 Ω; VGS =10V;

RG(ext) =6 Ω; Tj =25 °C

rise time

td(off)

turn-off delay time

fall time

-7

-ns

Source-drain diode

VSD

source-drain voltage

IS =115 mA; VGS =0V; Tj = 25 °C

0.47

0.75

1.1

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