2N7002BKMB datasheet(4/15 Pages) NXP

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2N7002BKMB

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Product data sheet

Rev. 2 — 13 June 2012

4 of 15

NXP Semiconductors

2N7002BKMB

60 V, single N-channel Trench MOSFET

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

IDM is single pulse

(1) tp = 1 ms

(2) DC; Tsp = 25 °C

(3) tp = 10 ms

(4) tp = 100 ms

(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2

Fig 4.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

aaa-002590

(A)

10-2

VDS (V)

10-1

102

10-1

limit RDSon = VDS / ID

(1)

(4)

(5)

(3)

(2)

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

305

350

K/W

[2]

150

175

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

--40

K/W

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