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STM8S103F2 Arkusz danych(PDF) 67 Page - STMicroelectronics |
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STM8S103F2 Arkusz danych(HTML) 67 Page - STMicroelectronics |
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67 / 121 page  DocID15441 Rev 14 67/121 STM8S103F2 STM8S103F3 STM8S103K3 Electrical characteristics 88 10.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Figure 20. Typical HSI frequency variation vs VDD @ 4 temperatures Table 34. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHS Accuracy of HSI oscillator User-trimmed with CLK_HSITRIMR register for given VDD and TA conditions(1) 1. Refer to application note. -- 1(2) 2. Guaranteed by design, not tested in production. % HSI oscillator accuracy (factory calibrated) VDD = 5 V, TA = 25 °C(3) 3. Guaranteed by characterization results. -1.0 - 1.0 VDD = 5 V, -25°C ≤ TA ≤ 85 °C -2.0 - 2.0 2.95 V ≤ VDD ≤ 5.5 V, -40°C ≤ TA ≤ 125 °C -3.0(3) -3.0(3) tsu(HSI) HSI oscillator wakeup time including calibration -- - 1.0(2) µs IDD(HSI) HSI oscillator power consumption - - 170 250(3) µA |
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