STM8S103F2 datasheet(69/121 Pages) STMICROELECTRONICS

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STM8S103F2 STM8S103F3 STM8S103K3

Electrical characteristics

10.3.5

Memory characteristics

RAM and hardware registers

Flash program memory/data EEPROM memory

Table 36. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Unit

VRM

Data retention mode(1)

1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design, not tested in production.

Halt mode (or reset)

VIT-max(2)

2. Refer to Section 10.3: Operating conditions for the value of VIT-max.

Table 37. Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min(1)

1. Guaranteed by characterization results.

Typ

Max

Unit

VDD

Operating voltage

(all modes, execution/write/erase)

fCPU≤ 16 MHz

2.95

5.5

tprog

Standard programming time (including

erase) for byte/word/block

(1 byte/4 byte/64 byte)

6.6

Fast programming time for 1 block

(64 byte)

3.33

terase

Erase time for 1 block (64 byte)

3.33

NRW

Erase/write cycles

(program memory)(2)

2. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a

write/erase operation addresses a single byte.

TA = +85 °C

100k

cycle

Erase/write cycles (data memory)(2)

TA = +125 °C

300k

tRET

Data retention (program and data

memory) after 10k erase/write cycles

at TA= +55 °C

TRET = 55 °C

year

Data retention (data memory) after

300k erase/write cycles at

TA= +125°C

TRET = 85 °C

IDD

Supply current (Flash programming or

erasing for 1 to 128 byte)

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