2

5

4

1

3

M246

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

SD56060

860 MHz

28 V

60 W

16 dB

60

•

Excellent thermal stability

•

Common source configuration push-pull

•

BeO-free package

Applications

•

Ground/air communication

•

ISM

Description

The SD56060 is a common source N-channel enhancement-mode lateral field-effect

RF power transistor designed for broadband commercial and industrial applications

at frequencies up to 1 GHz. It is designed for high gain and broadband performance

operating in common source mode at 28 V.

Product status link

SD56060

Product summary

Order code

SD56060

Marking

SD56060

Package

M246

Packing

Box

Base/bulk quantity

20/60

60 W, 28 V, HF to 1 GHz RF power LDMOS transistor

SD56060

Datasheet

DS11102 - Rev 2 - December 2021

For further information contact your local STMicroelectronics sales office.

www.st.com