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SD56060 Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części SD56060
Szczegółowy opis  60 W, 28 V, HF to 1 GHz RF power LDMOS transistor
PDF  13 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SD56060 Arkusz danych(HTML) 4 Page - STMicroelectronics

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3
Typical performances
Figure 1. Capacitance vs drain voltage (per section)
0
10
20
30
40
50
VDS (V)
1
10
100
1000
C (pF)
Ciss
Coss
Crss
f = 1 MHz
per section
Figure 2. Gate-source voltage vs case temperature
-25
0
25
50
75
100
TC (°C)
0.96
0.98
1.00
1.02
1.04
VGS (norm.)
VDS = 10 V
per section
Id = 1 A
Id = 2 A
Id = 5 A
Id = 4 A
Id = 3 A
Figure 3. Drain current vs gate voltage
VGS (V)
0
1
2
3
4
5
6
ID (A)
Vds = 10 V
per section
3.0
4.0
5.0
Figure 4. Output power vs input power
0
1
2
3
4
PIN (W)
0
20
40
60
80
100
120
140
POUT (W)
VDD = 28 V
IDQ = 400 mA
f = 860 MHz
Figure 5. Power gain vs input power
0
1
2
3
4
PIN (W)
12
13
14
15
16
17
18
19
20
GPS (dB)
Vdd = 28 V
Idq = 400 mA
f = 860 MHz
Figure 6. Efficiency vs output power
0
20
40
60
80
100
120
140
POUT (W)
0
10
20
30
40
50
60
70
ηD (%)
f = 860 Mhz
Vdd = 28 V
Idq = 400 mA
SD56060
Typical performances
DS11102 - Rev 2
page 4/13



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