SD56060 datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 28 V

μA

IGSS

Gate-source leakage current

VGS = 20 V, VDS = 0 V

μA

VGS(Q)

Gate quiescent voltage

VDS = 28 V, ID = 100 mA

2.8

5.0

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 3 A

1.3

GFS

Transconductance

VDS = 10 V, ID = 3 A

1.8

Ciss

Common source input

capacitance

VGS = 0 V, VDD = 28 V, f = 1 MHz

Crss

Common source feedback

capacitance

Coss

Common source output

capacitance

2.7

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

VDD = 28 V, IDQ = 100 mA, f = 860 MHz

GPS

Power gain

VDD = 28 V, IDQ = 100 mA,

POUT = 60 W, f = 860 MHz

ηD

Drain efficiency

IMD

Intermodulation distorsion

VDD = 28 V, IDQ = 100 mA,

POUT = 60 W, PEP(1)

-28

dBC

VSWR

Load mismatch

VDD = 28 V, IDQ = 100 mA,

POUT = 60 W, f = 860 MHz, all phases

5:1

1. PEP is: f1 = 860 MHz and f2 = 860.1 MHz.

SD56060

Electrical characteristics

DS11102 - Rev 2

page 3/13

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