V58C2128 datasheet(1/59 Pages) MOSEL

Numer części	V58C2128

Szczegółowy opis	HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM

PDF	59 Pages

Scroll/Zoom	100%

Producent	MOSEL [Mosel Vitelic, Corp]

Strona internetowa	http://www.moselvitelic.com

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MOSEL VITELIC

1

V58C2128(804/404/164)S

HIGH PERFORMANCE

2.5 VOLT 128 Mbit DDR SDRAM

4 BANKS X 4Mbit X 8 (804)

4 BANKS X 2Mbit X 16 (164)

4 BANKS X 8Mbit X 4 (404)

PRELIMINARY

V58C2128(804/404/164)S Rev.1.6 March 2002

67

75

8

DDR333B

DDR266A

DDR266B

DDR200

Clock Cycle Time (tCK2)

7.5 ns

7.5ns

10 ns

Clock Cycle Time (tCK2.5)

6 ns

7ns

7.5 ns

8 ns

System Frequency (fCK max)

167 MHz

143 MHz

133 MHz

125 MHz

Features

■ High speed data transfer rates with system

frequency up to 166 MHz

■ Data Mask for Write Control

■ Four Banks controlled by BA0 & BA1

■ Programmable CAS Latency: 2, 2.5

■ Programmable Wrap Sequence: Sequential

or Interleave

■ Programmable Burst Length:

2, 4, 8 for Sequential Type

2, 4, 8 for Interleave Type

■ Automatic and Controlled Precharge Command

■ Power Down Mode

■ Auto Refresh and Self Refresh

■ Refresh Interval: 4096 cycles/64 ms

■ Available in 66-pin 400 mil TSOP

■ SSTL-2 Compatible I/Os

■ Double Data Rate (DDR)

■ Bidirectional Data Strobe (DQS) for input and

output data, active on both edges

■ On-Chip DLL aligns DQ and DQs transitions with

CK transitions

■ Differential clock inputs CK and CK

■ Power Supply 2.5V ± 0.2V

■ QFC options for FET control. x4 parts.

*Note: DDR 333B Supports PC2700 module with 2.5-3-3 timing

DDR 266A Supports PC2100 module with 2-3-3 timing

DDR 266B Supports PC2100 module with 2.5-3-3 timing

DDR 200 Supports PC1600 module with 2-2-2 timing

Description

The V58C2128(804/404/164)S is a four bank

DDR DRAM organized as 4 banks x 4Mbit x 8 (804),

4 banks x 2Mbit x 16 (404), or 4 banks x 8Mbit x 4

(164). The V58C2128(804/404/164)S achieves high

speed data transfer rates by employing a chip archi-

tecture that prefetches multiple bits and then syn-

chronizes the output data to a system clock.

All of the control, address, circuits are synchro-

nized with the positive edge of an externally sup-

plied clock. I/O transactions are ocurring on both

edges of DQS.

Operating the four memory banks in an inter-

leaved fashion allows random access operation to

occur at a higher rate than is possible with standard

DRAMs. A sequential and gapless data rate is pos-

sible depending on burst length, CAS latency and

speed grade of the device.

Device Usage Chart

Operating

Temperature

Range

Package Outline

CK Cycle Time (ns)

Power

Temperature

Mark

JEDEC 66 TSOP II

-6

-7

-75

-8

Std.

L

0°C to 70°C

•

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Podobny numer części - V58C2128

Producent	Numer części	Arkusz danych	Szczegółowy opis
Mosel Vitelic, Corp	V58C2256	814Kb / 61P	HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
	V58C2256164S	814Kb / 61P	HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
	V58C2256404S	814Kb / 61P	HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
	V58C2256804S	814Kb / 61P	HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
	V58C265164S	451Kb / 44P	64 Mbit DDR SDRAM 2.5 VOLT 4M X 16

More results

Podobny opis - V58C2128

Producent	Numer części	Arkusz danych	Szczegółowy opis
Mosel Vitelic, Corp	V58C2256	814Kb / 61P	HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
	V58C265164S	451Kb / 44P	64 Mbit DDR SDRAM 2.5 VOLT 4M X 16
	V826516K04S	159Kb / 13P	2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
	V826532K04S	268Kb / 14P	2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
	V82658J04S	319Kb / 13P	2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
	V826632K24S	126Kb / 14P	2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
	V826664K24S	243Kb / 14P	2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
Integrated Silicon Solu...	IS43R16800A1	2Mb / 72P	8Meg x 16 128-MBIT DDR SDRAM
	IS43R16800A-6	1Mb / 47P	8Meg x 16 128-MBIT DDR SDRAM
	IS43R32400A	1Mb / 25P	4Meg x 32 128-MBIT DDR SDRAM

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