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15

14

13

12

11

5

4

3

2

1

C1P

PGND

C1N

NC

PVSS

INR

SDR

INL

NC

OUTR

NC − No internal connection

15

14

13

12

11

5

4

3

2

1

C1P

PGND

C1N

NC

PVSS

INR

SDR

INL

NC

OUTR

NC − No internal connection

TPA4411MRTJ

TPA4411RTJ

INR

INL

PGND

OUTL

PVSS

SVSS

C1N

PVDD

SGND

A1

B1

C1

D1

A2

A3

A4

SDL

SVDD

C1P

SDR

NC-Nointernalconnection

NC

NC

OUTR

TPA4411YZH

TPA4411

TPA4411M

SLOS430E – AUGUST 2004 – REVISED MARCH 2008

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

RTJ (QFN) PACKAGE

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YZH (WCSP) PACKAGE

(TOP VIEW)

2

Copyright © 2004–2008, Texas Instruments Incorporated

Product Folder Link(s): TPA4411 TPA4411M