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TPA4411 Arkusz danych(PDF) 5 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

Numer części TPA4411
Szczegółowy opis  80-mW DIRECTPATH??STEREO HEADPHONE DRIVER
PDF  30 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  TAOS [TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS]
Strona internetowa  http://www.taosinc.com
Logo TAOS - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

TPA4411 Arkusz danych(HTML) 5 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

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OPERATING CHARACTERISTICS
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
VDD = 3 V , TA = 25°C, RL = 16 Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
THD = 1%, VDD = 3 V, f = 1 kHz
50
THD = 1%, VDD = 4.5 V, f = 1 kHz
100
PO
Output power (Outputs In Phase)
mW
THD = 1%, VDD = 3 V, f = 1 kHz, RL = 32
50
Ω
PO = 25 mW, f = 1 kHz
0.054%
THD+N
Total harmonic distortion plus noise
PO = 25 mW, f = 20 kHz
0.010%
Crosstallk
PO = 20 mW, f = 1 kHz
–83
dB
200-mVpp ripple, f = 217 Hz
–82.5
kSVR
Supply ripple rejection ratio
200-mVpp ripple, f = 1 kHz
–70.4
dB
200-mVpp ripple, f = 20 kHz
–45.1
Av
Closed-loop voltage gain
–1.45
–1.5
–1.55
V/V
ΔAv
Gain matching
1%
Slew rate
2.2
V/µs
Maximum capacitive load
400
pF
Vn
Noise output voltage
10
µVRMS
Electrostatic discharge, IEC
OUTR, OUTL
±8
kV
fosc
Charge pump switching frequency
280
320
420
kHz
Start-up time from shutdown
450
µs
Input impedance
12
15
18
k
Ω
SNR
Signal-to-noise ratio
Po = 40 mW (THD+N = 0.1%)
98
dB
Threshold
150
170
°C
Thermal shutdown
Hysteresis
15
°C
Copyright © 2004–2008, Texas Instruments Incorporated
5
Product Folder Link(s): TPA4411 TPA4411M



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