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RA4M1 Arkusz danych(PDF) 50 Page - Renesas Technology Corp

Numer części RA4M1
Szczegółowy opis  RA4M1 Group
PDF  131 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M1 Arkusz danych(HTML) 50 Page - Renesas Technology Corp

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R01DS0355EJ0110 Rev.1.10
Page 50 of 131
Sep 29, 2023
RA4M1 Group
2. Electrical Characteristics
Figure 2.21
Voltage dependency in Subosc-speed mode (reference data)
Note 1.
Supply current values do not include output charge/discharge current from all pins. The values apply when internal pull-up
MOSs are in the off state.
Note 2.
The IWDT and LVD are not operating.
Note 3.
Includes the current of sub-oscillation circuit or low-speed on-chip oscillator.
Note 4.
VCC = 3.3 V.
Table 2.12
Operating and standby current (2)
Conditions: VCC = AVCC0 = 1.6 to 5.5 V
Parameter
Symbol
Typ*4
Max
Unit
Test conditions
Supply
current*1
Software Standby
mode*2
Ta = 25°C
ICC
0.8
4.5
μA-
Ta = 55°C
1.3
7.1
Ta = 85°C
3.5
20.2
Ta = 105°C
8.7
53.7
Increment for RTC operation with
low-speed on-chip oscillator*3
0.5
-
-
Increment for RTC operation with
sub-clock oscillator*3
0.4
-
SOMCR.SODRV[1:0] are 11b
(Low power mode 3)
1.2
-
SOMCR.SODRV[1:0] are 00b
(Normal mode)
Note 1. All peripheral operations except any BGO operation are operating normally. This is the average of the
actual measurements of the sample cores during product evaluation.
Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the
actual measurements for the upper limit samples during product evaluation.
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
55.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VCC (V)
, ICLK = 32 MHz*2
Ta = 105 C
Ta = 25 C, ICLK = 32 MHz*1
Ta = 25 C
 , ICLK = 32 MHz *1
Ta = 105 C
 , ICLK = 32 MHz *2



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