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RA4M1 Arkusz danych(PDF) 85 Page - Renesas Technology Corp

Numer części RA4M1
Szczegółowy opis  RA4M1 Group
PDF  131 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M1 Arkusz danych(HTML) 85 Page - Renesas Technology Corp

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R01DS0355EJ0110 Rev.1.10
Page 85 of 131
Sep 29, 2023
RA4M1 Group
2. Electrical Characteristics
2.4
USB Characteristics
2.4.1
USBFS Timing
Figure 2.65
USB_DP and USB_DM output timing
Table 2.40
USB characteristics
Conditions: VCC = VCC_USB = 3.0 to 3.6 V, Ta = -20 to +85°C (USBCLKSEL = 1), Ta = -40 to +105°C (USBCLKSEL = 0)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input
characteristics
Input high level voltage
VIH
2.0
-
V
-
Input low level voltage
VIL
-0.8
V
-
Differential input sensitivity VDI
0.2
-
V
|USB_DP - USB_DM |
Differential common mode
range
VCM
0.8
2.5
V
-
Output
characteristics
Output high level voltage
VOH
2.8
VCC_USB
V
IOH = -200 μA
Output low level voltage
VOL
0.0
0.3
V
IOL = 2 mA
Cross-over voltage
VCRS
1.3
2.0
V
Figure 2.65,
Figure 2.66,
Figure 2.67
Rise time
FS
tr
420
ns
LS
75
300
Fall time
FS
tf
420
ns
LS
75
300
Rise/fall time ratio
FS
tr/tf
90
111.11
%
LS
80
125
Output resistance
ZDRV
28
44
Ω
(Adjusting the resistance
of external elements is not
necessary.)
VBUS
characteristics
VBUS input voltage
VIH
VCC × 0.8
-
V
-
VIL
-VCC × 0.2
V
-
Pull-up,
pull-down
Pull-down resistor
RPD
14.25
24.80
kΩ
-
Pull-up resistor
RPUI
0.9
1.575
kΩ
During idle state
RPUA
1.425
3.09
kΩ
During reception
Battery Charging
Specification
Ver 1.2
D + sink current
IDP_SINK
25
175
μA-
D - sink current
IDM_SINK
25
175
μA-
DCD source current
IDP_SRC
713
μA-
Data detection voltage
VDAT_REF
0.25
0.4
V
-
D + source voltage
VDP_SRC
0.5
0.7
V
Output current = 250 μA
D - source voltage
VDM_SRC
0.5
0.7
V
Output current = 250 μA
USB_DP,
USB_DM
tf
tr
90%
10%
10%
90%
VCRS



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