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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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CY8C53 Arkusz danych(PDF) 91 Page - Cypress Semiconductor |
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CY8C53 Arkusz danych(HTML) 91 Page - Cypress Semiconductor |
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91 / 106 page  PRELIMINARY PSoC® 5: CY8C53 Family Datasheet Document Number: 001-66237 Rev. *A Page 91 of 106 11.7.2 EEPROM 11.7.3 SRAM Table 11-53. EEPROM DC Specifications Parameter Description Conditions Min Typ Max Units Erase and program voltage 2.7 – 5.5 V Table 11-54. EEPROM AC Specifications Parameter Description Conditions Min Typ Max Units TWRITE Single row erase/write cycle time – 2 20 ms EEPROM data retention time, retention period measured from last erase cycle Average ambient temp, TA ≤ 25 °C, 1M erase/program cycles 20 – – years Average ambient temp, TA ≤ 55 °C, 100 K erase/program cycles 20 – – Average ambient temp. TA ≤ 85 °C, 10 K erase/program cycles 10 – – Table 11-55. SRAM DC Specifications Parameter Description Conditions Min Typ Max Units VSRAM SRAM retention voltage 1.2 – – V Table 11-56. SRAM AC Specifications Parameter Description Conditions Min Typ Max Units FSRAM SRAM operating frequency DC – 67.01 MHz [+] Feedback |
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